document number: 81731 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 21-oct-10 1 5-line esd protection diode array in llp75-6l gmf05c-hsf vishay semiconductors marking (example only) dot = pin 1 marking yy = type code (see table below) xx = date code features ? ultra compact llp75-6l package ? low package profile < 0.6 mm ? 5-line esd-protection ? surge immunity acc. iec 61000-4-5 i ppm > 12 a ? low leakage current i r < 1 a ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? working voltage range v rwm = 5 v ? e4 - precious metal (e.g. ag, au, nipd, nipdau) (no sn) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20453 1 19956 1 2 3 6 54 21001 xx yy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gmf05c-hsf gmf05c-hsf-gs08 3000 15 000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions gmf05c-hsf llp75-6l 1a 4.2 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings gmf05c-hsf parameter test conditions symbol value unit peak pulse current bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 12 a peak pulse power bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 200 w esd immunity bias-mode: each input (pin 1; 3 - pin 6) to ground (pin 2); acc. iec 61000-4-2; 10 pulses contact discharge v esd 30 kv air discharge 30 kv operating temperature j unction temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c ** please see document ?vishay material category policy?: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81731 2 rev. 1.4, 21-oct-10 gmf05c-hsf vishay semiconductors 5-line esd protection diode array in llp75-6l bias-mode (5-line bidirectional asymmetrical protection mode) with the gmf05c-hsf up to 5 signal- or data-lines (l1 to l5) c an be protected against voltage transients. with pin 2 connected to ground and pin 1; 3 up to pin 6 connected to a signal- or data -line which has to be protected. as long as the voltage level on the data- or signal-line is between 0 v (ground level) and the specified maximum reverse working voltage (v rwm ) the protection diode between data line and ground offer a high isolation to t he ground line. the protection device behaves like an open switch . as soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to grou nd. now the protection device be haves like a closed switch. the clamping voltage (v c ) is defined by the breakthrough voltage (v br ) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. any negative transient signal will be clamped accordingly. the ne gative transient current is flowing in the forward direction o f the protection diode. the low forward voltage (v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse dire ction the gmf05c-hsf clamping behaviour is bidirectional and asymmetrical (bias). note ? ratings at 25 c, ambient temperature unles s otherwise specified. bias mode: each input (pin 1; 3 - pin 6) to ground (pin 2). if a higher surge current or peak pulse current (i pp ) is needed, some protection diodes in the gmf05c-hsf can also be used in parallel in order to ?multiply? the performance. if two diodes are switched in parallel you get ? double surge power = double peak pulse current (2 x i ppm ) ? half of the line inductance = reduced clamping voltage ? half of the line resistance = reduced clamping voltage ? double line capacitance (2 x c d ) ? double reverse leakage current (2 x i r ) l4 l1 l5 l2 l3 20739 1 2 5 4 3 3 bias ground electrical charac teristics gmf05c-hsf parameter test conditions/remarks symbol min. typ. max. unit protection paths number of lines which can be protected n channel - - 5 lines reverse working voltage at i r = 1 a v rwm 5- -v reverse current at v r = v rwm = 5 v i r -< 0.11 a reverse breakdown voltage at i r = 1 ma v br 6-8v reverse clamping voltage at i pp = 12 a acc. iec 61000-4-5 v c - - 12.5 v at i pp = 1 a acc. iec 61000-4-5 - 7.8 9.5 v forward clamping voltage at i f = 12 a acc. iec 61000-4-5 v f --5.5v at i pp = 1 a acc. iec 61000-4-5 - 1.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 126 150 pf at v r = 2.5 v; f = 1 mhz - 76 - pf l1 l2 l3 20740 1 3 6 5 4 2 ground
document number: 81731 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 21-oct-10 3 gmf05c-hsf 5-line esd protection diode array in llp75-6l vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical peak clamping voltage v c vs. 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 0 20 40 60 8 0 100 120 140 0123456 f = 1 mhz bias-mode v r ( v ) c d (pf) 21204 0.001 0.01 0.1 1 10 100 0.5 0.6 0.7 0. 8 0.9 bias-mode v f ( v ) i f (ma) 21205 0 1 2 3 4 5 6 7 0.01 0.1 1 10 100 1000 10 000 bias-mode i r ( a) v r ( v ) 21206 0 2 4 6 8 10 12 14 0246 8 10 12 14 16 v c meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) bias-mode i pp (a) v c ( v ) 21207
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81731 4 rev. 1.4, 21-oct-10 gmf05c-hsf vishay semiconductors 5-line esd protection diode array in llp75-6l peak pulse current i pp fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) fig. 9 - typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) - 60 - 40 - 20 0 20 40 60 8 0 - 10 0 10 20 30 40 50 60 70 8 090 t (ns) v c-esd ( v ) 2120 8 acc. iec 61000-4-2 + 8 k v contact discharge - 8 0 - 60 - 40 - 20 0 20 40 60 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 - 8 k v contact discharge t (ns) v c-esd ( v ) 21209 - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 0 5 10 15 20 25 30 acc. iec 61000-4-2 contact discharge v c-esd positi v e discharge n egati v e discharge v esd (k v ) v c-esd ( v ) 21210
document number: 81731 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.4, 21-oct-10 5 gmf05c-hsf 5-line esd protection diode array in llp75-6l vishay semiconductors package dimensions in millimeter s (inches): llp75-6l 1.05 (0.041) 0.5 (0.020) 0.95 (0.037) heat sink 0.3 (0.012) 0.2 (0.00 8 ) 0.3 (0.012) 0.2 (0.00 8 ) 0.3 (0.012) 0.2 (0.00 8 ) 0.55 (0.022) 0.45 (0.01 8 ) 0.6 (0.024) 0.25 (0.010) 0.05 (0.002) 0 (0.000) 0.15 (0.006) 0.60 (0.023) 0.54 (0.021) 1.65 (0.065) 1.55 (0.061) 1.65 (0.065) 1.55 (0.061) pin 1 marking 0.5 (0.020) 0.5 (0.020) 0.3 (0.012) 0.3 (0.012) 0.15 (0.006) 0.15 (0.006) 0.5 (0.020) 0.5 (0.020) 1 (0.039) 0.25 (0.010) solder resist mask solder pad doc u ment no.:s 8 - v -3906.02-010 (4) re v . 4 - date: 21. march 2006 20454 created - date: 04. may 2005 foot print recommendation: 1 (0.039) 1 (0.039)
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